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ITS4200S-ME-P Schematic ( PDF Datasheet ) - Infineon

Teilenummer ITS4200S-ME-P
Beschreibung Smart High-Side NMOS-Power Switch
Hersteller Infineon
Logo Infineon Logo 




Gesamt 20 Seiten
ITS4200S-ME-P Datasheet, Funktion
ITS4200S-ME-P
Smart High-Side NMOS-Power Switch
Data Sheet
Rev 1.0, 2012-09-01
Standard Power






ITS4200S-ME-P Datasheet, Funktion
4.2 Functional Range
ITS4200S-ME-P
General Product Characteristics
Table 2 Funtional Range
Parameter
Nominal Operating Voltage
Continuous Input Voltage
Symbol
Min.
VS 11
VIN -3
Values
Typ. Max.
45
VS
Unit
V
V
Note /
Test Condition
VS increasing
Number
4.2.1
4.2.2
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3 Thermal Resistance
This thermal data was generated in accordance to JEDEC JESD51 standards.
More information on www.jedec.org
Table 3 Thermal Resistance1)
Parameter
Symbol
Values
Unit Note /
Min. Typ. Max.
Test Condition
Number
Thermal Resistance - Junction to
pin5
Rthj-pin5
41.8
K/W
4.3.1
Thermal Resistance - Junction to
Ambient - 1s0p, minimal footprint
RthJA_1s0p
155.5
K/W 2)
4.3.2
Thermal Resistance - Junction to
Ambient - 1s0p, 300mm2
RthJA_1s0p_300mm
76.1
K/W 3)
4.3.3
Thermal Resistance - Junction to
Ambient - 1s0p, 600mm2
RthJA_1s0p_600mm
67.1
K/W 4)
4.3.4
Thermal Resistance - Junction to
Ambient - 2s2p
RthJA_2s2p
93.6
K/W 5)
4.3.5
Thermal Resistance - Junction to
Ambient with thermal vias - 2s2p
RthJA_2s2p
50.0
K/W 6)
4.3.6
1) Not subject to production test, specified by design
2) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, footprint; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
3) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, Cu, 300mm2; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
4) Specified RthJA value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board, 600mm2; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70µm Cu.
5) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; the Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
6) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board with two thermal vias;
the Product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2
x 35µm Cu. The diameter of the two vias are equal 0.3mm and have a plating of 25um with a copper heatsink area of 3mm
x 2mm). JEDEC51-7: The two plated-through hole vias should have a solder land of no less than 1.25 mm diameter with
a drill hole of no less than 0.85 mm diameter.
Data Sheet
6 Rev 1.0, 2012-09-01

6 Page









ITS4200S-ME-P pdf, datenblatt
ITS4200S-ME-P
Typical Characterisitics
Input Current Consumption IIN versus
Junction Temperature Tj
Typical Performance Graphs
Input Current Consumption IIN versus
Input voltage VIN
60
50
40
30
20
10
VIN1.8V;Vs=15V
VIN=5V;Vs=15V
0
−40 −25 0 25 50 75 100 125
Tj [°C]
Input Threshold voltage VINH,L versus Junction
Temperature Tj
3
60
50
40
30
20
10 Tj=−40°C;Vs=15V
Tj=25°C;Vs=15V
Tj=125°C;Vs=15V
0
0 5 10 15 20
VIN[V]
Input Threshold voltage VINH,L versusSupply
Voltage VS
3
2.5 2.5
22
1.5 1.5
11
0.5
OFF;Vs=15V
ON;Vs=15V
0
−40 −25 0 25 50 75 100 125
Tj [°C]
Initial Peak Short Circuit Current Limt ILSCP versus
Supply Voltage VS
0.5
0
10
OFF;Tj=25°C
ON;Tj=25°C
20 30 40
Vs[V]
50
Max. allowable Inductive single pulse Switch-off
Energy EAS versus Load current IL
Data Sheet
12 Rev 1.0, 2012-09-01

12 Page





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