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2N7002DW Schematic ( PDF Datasheet ) - Infineon Technologies

Teilenummer 2N7002DW
Beschreibung Small-Signal-Transistor
Hersteller Infineon Technologies
Logo Infineon Technologies Logo 




Gesamt 9 Seiten
2N7002DW Datasheet, Funktion
OptiMOSSmall-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• Fast switching
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
2N7002DW
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
60 V
3W
4
0.3 A
PG-SOT363
65
4
1
2
3
Type
Package Tape and Reel Information
2N7002DW PG-SOT363 H6327: 3000 pcs/reel
Marking
X8s
HalogenFree Packing
Yes Non Dry
Parameter 1)
Continuous drain current
Pulsed drain current
Symbol Conditions
I D T A=25 °C
T A=70 °C
I D,pulse T A=25 °C
Value
0.30
0.24
1.2
Unit
A
Avalanche energy, single pulse
E AS I D=0.3 A, R GS=25 W
Reverse diode dv /dt
Gate source voltage
dv /dt
V GS
I D=0.3 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
ESD class
JESD22-A114 (HBM)
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Remark: one of both transistors in operation.
1.3 mJ
6
±20
class 0 (<250V)
0.5
-55 ... 150
55/150/56
kV/µs
V
W
°C
Rev.2.3
page 1
2014-09-19






2N7002DW Datasheet, Funktion
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=0.3 A; V GS=10 V
6.0
5.0
4.0
98 %
3.0
2.0
typ
1.0
0.0
-60 -20 20
60 100
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
140
102
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=250 µA
parameter: I D
3.2
2N7002DW
2.8
2.4 98 %
2 typ
1.6
2%
1.2
0.8
0.4
0
-60 -20 20 60 100 140
Tj [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
101
100
0
Rev.2.3
100
Ciss
10-1
150 °C
25 °C
150 °C, 98%
25 °C, 98%
10 20
VDS [V]
Coss
Crss
30
10-2
10-3
0
page 6
0.4 0.8 1.2
VSD [V]
1.6
2014-09-19

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