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BSS138 Schematic ( PDF Datasheet ) - Pan Jit International

Teilenummer BSS138
Beschreibung 50V N-Channel Enhancement Mode MOSFET
Hersteller Pan Jit International
Logo Pan Jit International Logo 




Gesamt 3 Seiten
BSS138 Datasheet, Funktion
BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R , V @10V,I @500mA=3Ω
DS(ON) GS
DS
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• RDS(ON), VGS@2.5V,IDS@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• In compliance with EU RoHS 2002/95/EC directives
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 138
• Apporx. Weight: 0.0003 ounce, 0.0084 gram
0.004(0.10)MAX.
0.020(0.50)
0.013(0.35)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
TA= 2 5 OC
TA= 7 5 OC
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Range
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
V GS
ID
IDM
PD
T J , T S TG
RθJA
Limit
50
+20
300
2000
350
210
-55 to + 150
357
Uni ts
V
V
mA
mA
mW
OC
OC /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 04,2010-REV.00
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