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Número de pieza | IPP120N04S4-01 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPP120N04S4-01 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N04S4-01
IPI120N04S4-01, IPP120N04S4-01
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
1.5 mΩ
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N04S4-01
IPI120N04S4-01
IPP120N04S4-01
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0401
4N0401
4N0401
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
120
120
480
750
120
±20
188
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-12
1 page 5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; SMD
parameter: V GS
480
10 V
420
360
300
240
IPB120N04S4-01
IPI120N04S4-01, IPP120N04S4-01
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
6.5 V
7
6V
5
5.5 V
180
5.5 V
120 3
6V
60
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
480
3
1
40
120
I D [A]
6.5 V
7V
10 V
240
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD
2.5
420
360 2
300
240 1.5
180
120
60
0
3
175 °C
25 °C
-55 °C
456
V GS [V]
1
7
0.5
-60 -20 20
60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-04-12
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPP120N04S4-01.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPP120N04S4-01 | Power-Transistor | Infineon |
IPP120N04S4-02 | Power-Transistor | Infineon |
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