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Teilenummer | IPI120N04S4-01 |
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Beschreibung | Power-Transistor | |
Hersteller | Infineon | |
Logo | ||
Gesamt 9 Seiten OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB120N04S4-01
IPI120N04S4-01, IPP120N04S4-01
Product Summary
V DS
R DS(on),max (SMD version)
ID
40 V
1.5 mΩ
120 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB120N04S4-01
IPI120N04S4-01
IPP120N04S4-01
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0401
4N0401
4N0401
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
120
120
480
750
120
±20
188
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-12
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: I D
4
IPB120N04S4-01
IPI120N04S4-01, IPP120N04S4-01
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
3.5
3 700 µA
140 µA
2.5
104
103
Ciss
Coss
2
102
Crss
1.5
1
-60 -20 20 60 100 140 180
T j [°C]
101
0
5 10 15 20 25 30
V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD)
parameter: T j
103
12 Avalanche characteristics
I A S= f(t AV)
parameter: Tj(start)
1000
102
175 °C 25 °C
101
100
10
25 °C
100 °C
150 °C
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD [V]
1
1
Rev. 1.0
page 6
10 100
t AV [µs]
1000
2010-04-12
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ IPI120N04S4-01 Schematic.PDF ] |
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