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PDF IPD90N03S4L-03 Data sheet ( Hoja de datos )
| Número de pieza | IPD90N03S4L-03 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD90N03S4L-03 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD90N03S4L-03
Product Summary
V DS
R DS(on),max
ID
30 V
3.3 mΩ
90 A
PG-TO252-3-11
Type
IPD90N03S4L-03
Package
Marking
PG-TO252-3-11 4N03L03
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
90
90
360
85
90
±16
94
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 2.1
page 1
2010-03-08
1 page  
IPD90N03S4L-03
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
280
240
10 V 5 V
4.5 V
200
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
12
11 3 V
4V
10
3.5 V
9
8
160
7
3.5 V
120
6
80
40
0
0
5
3V 4
2.5 V
3
2
1234
0 30 60 90
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
280
240
200
-55 °C
25 °C
175 °C
5
4
4V
4.5 V
5V
10 V
120
160
3
120
80
2
40
01
1
2
3
4
5
-60 -20
20
60 100 140 180
V GS [V]
T j [°C]
Rev. 2.1
page 5
2010-03-08
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD90N03S4L-03.PDF ] | |
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