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PDF IPD220N06L3G Data sheet ( Hoja de datos )
| Número de pieza | IPD220N06L3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Type
OptiMOS(TM)3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPD220N06L3 G
IPD220N06L3 G
Product Summary
V DS
R DS(on),max
ID
60 V
22 mΩ
30 A
Package
Marking
PG-TO-252-3
220N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Value
30
21
120
13
±20
36
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.0
page 1
2008-12-09
1 page  
IPD220N06L3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
100
10 V
6V
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
40
4 V 4.5 V 5 V
6V
80
5V
60
40 4.5 V
4V
20
3.5 V
3V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
4
30
20
10 V
10
5 0 20 40 60 80
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100 120
50
50
40
40
30
30
20
20
10
10
175 °C
25 °C
0
012345
V GS [V]
0
0 10 20 30 40 50 60
I D [A]
Rev. 2.0
page 5
2008-12-09
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD220N06L3G.PDF ] | |
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