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Número de pieza | 4MBI100T-060 | |
Descripción | IGBT Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 4MBI100T-060 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT Module
4MBI100T-060
MS5F 5431
Apr. 23 ’03 S.Ogawa
Apr. 23 ’03 T.Miyasaka
Apr. - 23 - ’03 K.Yamada
T.Fujihira
Fuji Electric Co.,Ltd.
Matsumoto Factory
MS5F 5431
1
14
a
b
c
H04-004-07
1 page 6. Indication on module
4 M B I 1 0 0 T -0 6 0
100A 600V
Lot No.
P lace of m anufuc turing
7. Applicable category
This specification is applied to IGBT Module named 4MBI100T-060
8. Storage and transportation notes
・ The module should be stored at a standard temperature of 5 to 35C and
humidity of 45 to 75% .
・ Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
・ Avoid exposure to corrosive gases and dust.
・ Avoid excessive external force on the module.
・ Store modules with unprocessed terminals.
・ Do not drop or otherwise shock the modules when tranporting.
9. Definitions of switching time
RG
V GE
L
V CE
Ic
0V
V GE
VCE
Vcc
0V Ic
0A
90%
trr
90%
Irr Ic
10% 10%
tr(i)
tr
ton
VCE
toff
0V
90%
10%
tf
MS5F 5431
5
14
a
b
c
H04-004-03
5 Page [ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C
1000
ton
toff
tr
100
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg= 33ohm, Tj= 125C
1000
ton
toff
tr
100
tf
10
0 50 100 150 200
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C
5000
1000
ton
toff
tr
100
tf
10
5 10
100
Gate resistance : Rg [ ohm ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 125C
30
10
0 50 100 150 200
Collector current : Ic [ A ]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm
10
Eon(125C)
Eon(25C)
5 Eoff(125C)
Eoff(25C)
Err(125C)
Err(25C)
0
0 100 200
Collector current : Ic [ A ]
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=33ohm, Tj<=125C
300
Eon
20 200
10 100
Eoff
Err
0
10 100 500
Gate resistance : Rg [ ohm ]
0
0 200 400 600 800
Collector - Emitter voltage : VCE [ V ]
MS5F 5431
11
14
a
b
c
H04-004-03
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet 4MBI100T-060.PDF ] |
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