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Número de pieza | 4MBI400VG-060R-50 | |
Descripción | IGBT Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 4MBI400VG-060R-50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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4MBI400VG-060R-50
IGBT Modules
IGBT MODULE (V series)
600V / 400A / IGBT, RB-IGBT 4 in one package
Features
Higher Efficiency
Optimized A (T-type) -3 level circuit
Low inductance module structure
Featuring Reverse Blocking IGBT (RB-IGBT)
Applications
Inverter for Motor Drive
Uninterruptible Power Supply
Power conditioner
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IGBT
FWD
IC
Icp
-IC
-IC pulse
Continuous
1ms
1ms
Collector power dissipation
PC 1 device
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IC Continuous
Icp 1ms
Collector power dissipation
PC 1 device
Junction temperature
Tj
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
Screw torque
Mounting (*2)
Terminals (*3)
- M5 or M6
- M5
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable value : 2.5-3.5 Nm (M5 or M6)
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
TC=80°C
TC=80°C
TC=80°C
TC=80°C
Maximum ratings
600
±20
400
800
400
800
1135
600
±20
400
800
1560
150
125
-40 ~ +125
2500
3.5
3.5
Units
V
V
A
W
V
V
A
W
°C
VAC
Nm
1
1 page 4MBI400VG-060R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ SW mode A ]
Switching time vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-39Ω, Tj=125°C (T1, T2)
10000
1000
toff
ton
tr
tf
100
[ SW mode A ]
Switching time vs. Collector current (typ.)
VCC=400V, IC=400A, VGE=±15V, Tj=125°C
10000
toff
1000
100
ton
tr
tf
10
0
100 200 300 400 500 600 700
Collector current: IC [A]
[ SW mode A ]
Switching loss vs. gate resistance (typ.)
VCC=400V, IC=400A, VGE=±15V
200
Eoff(125°C)
100 Eon(125°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
0
1
10 Err(25°C) 100
1000
Gate resistance : RG [Ω] (T1, T2)
[ T1, T2 ]
Forward current vs. forward on voltage (typ.)
chip
800
700
Tj=25°C
Tj=125°C
600
500
400
300
200
100
0
01234
Forward on voltage : VF [V]
5
10
1
10 100
Gate resistance : RG [Ω] (T1, T2)
[ SW mode A]
Switching loss vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-39Ω (T1, T2)
150
Eoff(125°C)
Eoff(25°C)
100
Eon(125°C)
50
Eon(25°C)
Err(125°C)
0 Err(25°C)
0 100 200 300 400 500 600 700
Collector current: IC [A]
[ T1, T2 ]
Reverse recovery characteristics (typ.)
VCC=400V, VGE=±15V, RG=+10/-39Ω(T1, T2)
1000
trr(125°C)
trr(25°C)
100 Irr(125°C)
Irr(25°C)
10
0
100 200 300 400 500 600
Forward current : IF [A]
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 4MBI400VG-060R-50.PDF ] |
Número de pieza | Descripción | Fabricantes |
4MBI400VG-060R-50 | Power Devices (IGBT) | ETC |
4MBI400VG-060R-50 | IGBT Module | Fuji Electric |
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