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4MBI300VG-120R-50 Schematic ( PDF Datasheet ) - Fuji Electric

Teilenummer 4MBI300VG-120R-50
Beschreibung IGBT Module
Hersteller Fuji Electric
Logo Fuji Electric Logo 




Gesamt 11 Seiten
4MBI300VG-120R-50 Datasheet, Funktion
http://www.fujielectric.com/products/semiconductor/
4MBI300VG-120R-50
IGBT Modules
IGBT MODULE (V series)
1200V / 300A / IGBT, 600V/300A/RB-IGBT, 4 in one package
Features
Higher Efficiency
Optimized A (T-type) -3 level circuit
Low inductance module structure
Featuring Reverse Blocking IGBT (RB-IGBT)
Applications
Inverter for Motor Drive
Uninterruptible Power Supply
Power conditioner
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IGBT
FWD
IC
Icp
-IC
-IC pulse
Continuous
1ms
1ms
Collector power dissipation
PC 1 device
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
IC Continuous
Icp 1ms
Collector power dissipation
PC 1 device
Junction temperature
Tj
Case temperature
TC
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
Screw torque
Mounting (*2)
Terminals (*3)
- M5 or M6
- M5
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable value : 2.5-3.5 Nm (M5 or M6)
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
TC=80°C
TC=80°C
TC=80°C
TC=80°C
Maximum ratings
1200
±20
300
600
300
600
1250
600
±20
300
600
1250
150
125
-40 ~ +125
2500
3.5
3.5
Units
V
V
A
W
V
V
A
W
°C
VAC
Nm
1






4MBI300VG-120R-50 Datasheet, Funktion
4MBI300VG-120R-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Reverse bias safe operating area (max.)
VGE=15V, -VGE 15V, RG +10 / -1Ω, Tj 125°C, LS = 46nH (T1, T2)
T1, T2 (Terminal)
1000
800
600
400 RBSOA
(Repetitive pulse)
200
0
0 400 800 1200
Collector-Emitter voltage : VCE [V]
[ SW mode C ]
Switching time vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-1Ω, Tj=125°C (T1, T2)
10000
1000
tr
100
ton
toff
tf
[ SW mode C ]
Switching time vs. Collector current (typ.)
VCC=400V, IC=300A, VGE=±15V, Tj=125°C
10000
1000 toff
ton
tr
100 tf
10
0
100 200 300 400
Collector current: IC [A]
500
[ SW mode C ]
Switching loss vs. gate resistance (typ.)
VCC=400V, IC=300A, VGE=±15V
200
150
100
50
Eoff(125°C)
Eoff(25°C)
0
1
Eon(125°C)
Eon(25°C)
Err(125°C)
10 Err(25°C)
Gate resistance : RG [Ω] (T1, T2)
100
6
10
1
10 100
Gate resistance : RG [Ω] (T1, T2)
[ SW mode C]
Switching loss vs. Collector current (typ.)
VCC=400V, VGE=±15V, RG=+10/-1Ω (T1, T2)
75
Eon(125°C)
50
Eon(25°C)
Eoff(125°C)
Eoff(25°C)
25
Err(125°C)
Err(25°C)
0
0 100 200 300 400 500 600
Collector current: IC [A]

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