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1MBI200HH-120L-50 Schematic ( PDF Datasheet ) - Fuji Electric

Teilenummer 1MBI200HH-120L-50
Beschreibung IGBT Module
Hersteller Fuji Electric
Logo Fuji Electric Logo 




Gesamt 7 Seiten
1MBI200HH-120L-50 Datasheet, Funktion
http://www.fujielectric.com/products/semiconductor/
1MBI200HH-120L-50
IGBT MODULE
1200V / 200A / 1 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter DB for Motor Drive
AC and DC Servo Drive Amplifier (DB)
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
IC
Collector current
Icp
-IC
-IC pluse
Collector Power Dissipation
PC
Reverse voltage for FWD
VR
Forword current for FWD
IF
IF pulse
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Screw Torque
Mounting (*3)
Terminals (*4)
-
Conditions
Continuous
1ms
TC=25°C
TC=80°C
TC=25°C
TC=80°C
1ms
1 device
Continuous
1ms
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
Note *3: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Note *4: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Maximum ratings
1200
±20
300
200
600
400
75
150
1390
1200
200
400
+150
-40 to +125
2500
3.5
4.5
Units
V
V
A
W
V
A
°C
VAC
Nm
1






1MBI200HH-120L-50 Datasheet, Funktion
1MBI200HH-120L-50
Outline Drawings, mm
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
T1 (G 1)
NTC
T2(E1)
G2
E2
C1
FWD
C2E1
Inverse Diode
E2
6

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