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Teilenummer | 7MBP75VDA060-50 |
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Beschreibung | IGBT Module | |
Hersteller | Fuji Electric | |
Logo | ||
Gesamt 11 Seiten http://www.fujielectric.com/products/semiconductor/
7MBP75VDA060-50
IGBT Modules
IGBT MODULE (V series)
600V / 75A / IPM
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (TC=25ºC, VCC=15V unless otherwise specified)
Items
Symbol
Min.
Collector-Emitter Voltage (*1)
VCES
0
Short Circuit Voltage
VSC 200
DC IC
-
Collector Current
1ms
Icp
-
Duty=77.1% (*2) -IC
-
Collector Power Dissipation 1 device (*3)
PC
-
Collector Current
DC
1ms
IC
Icp
-
-
Forward Current of Diode
IF
-
Collector Power Dissipation 1 device (*3)
PC
-
Supply Voltage of Pre-Driver (*4)
VCC
-0.5
Input Signal Voltage (*5)
Vin -0.5
Alarm Signal Voltage (*6)
VALM
-0.5
Alarm Signal Current (*7) IALM -
Junction Temperature
Tj -
Operating Case Temperature
Topr
-20
Storage Temperature
Tstg -40
Solder Temperature (*8)
Tsol -
Isolating Voltage (*9)
Viso -
Screw Torque
Terminal (M4)
Mounting (M4)
-
-
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(IF×VF Max.)×100
Note *3: PC=125ºC/Rth(j-c)Q (Inverter & Brake)
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
Max.
600
400
75
150
75
250
50
100
50
201
20
VCC+0.5
VCC
20
150
110
125
260
AC2500
1.7
Units
V
V
A
A
A
W
A
A
A
W
V
V
V
mA
ºC
ºC
ºC
ºC
Vrms
Nm
1
7MBP75VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
VDC=300V,VCC=15V,Tj=25℃
8
7
6
5
4 Eon
3
2 Eoff
1
Err
0
0 20 40 60 80 100 120
Collector current : IC [ A ]
Switching Loss vs. Collector Current (typ.)
VDC=300V,VCC=15V,Tj=125℃
8
7
6
Eon
5
4
3
Eoff
2
1 Err
0
0 20 40 60 80 100 120
Collector current : IC [ A ]
Reversed biased safe operating area
VCC=15V,Tj≦125℃[Main Terminal] (min.)
300
250
200
150
100
RBSOA
(Repetitive pulse)
50
0
0 200 400 600
Collector-Emitter voltage : VCE [ V ]
800
Transient thermal resistance (max.)
10
1 FWD
IGBT
0.1
0.01
0.001
0.01 0.1
1
Pulse width : PW [ sec ]
10
500
400
300
200
100
0
0
Power derating for IGBT (max.)
[per device]
50 100
Case Temperature : TC [ ℃ ]
150
6
300
250
200
150
100
50
0
0
Power derating for FWD (max.)
[per device]
50 100
Case Temperature : TC [ ℃ ]
150
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ 7MBP75VDA060-50 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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