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Número de pieza | 72T03GH | |
Descripción | AP72T03GH | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 72T03GH (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP72T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristic
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T03GJ)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
30V
9mΩ
62A
GD
S
TO-252(H)
G
D
S
TO-251(J)
Rating
30
+ 20
62
44
190
60
0.4
29
24
-55 to 175
-55 to 175
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
.
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.5
62.5
110
Units
℃/W
℃/W
℃/W
1
200902263
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 72T03GH.PDF ] |
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