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PDF FGA50N60LS Data sheet ( Hoja de datos )
| Número de pieza | FGA50N60LS | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGA50N60LS
IGBT
General Description
Fairchild's LS series product of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The LS series is
especially designed for applications in medium frequencies
such as switched reluctance motor controls, AC & DC
motor controls, general inverters etc.
Features
• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• Low saturation voltage : VCE(sat) = 1.6 V @ IC = 50A
• High input impedance
• Optimized for medium operating frequencies (1~5kHz)
Applications
Switched Reluctance Motor Controls , AC & DC motor controls, general purpose inverters,Robotics, and Servo controls
C
G
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
E
FGA50N60LS
600
± 20
100
50
150
10
240
96
-55 to +150
-55 to +150
300
Typ.
--
--
Max.
0.52
40
Units
V
V
A
A
A
µs
W
W
°C
°C
°C
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA50N60LS Rev. A
1 page  
10000
Eoff
1000 Eoff
Eon
Eon
100
10 20
Common Emitter
V
GE
=
+15V,
R
G
=
5.9Ω
T = 25oC
C
TC = 125oC
40 60 80
Collector Current, IC [A]
100
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R=
L
6Ω
12 Tc=25oC
9
6
300V
200V
Vcc=100V
3
0
0 30 60 90 120 150 180
Gate Charge, Qg (nC)
Fig 14. Gate Charge Characteristics
IC MAX. (Pulsed)
100
I MAX. (Continuous)
C
10
DC Operation
50µs
100µs
1ms
1 Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.1 1 10 100
Collector - Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
VGE = 20V, TC = 100oC
1
1 10 100
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA
1000
10
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
1E-3
-5
10
single pulse
-4
10
-3
10
-2
10
-1
10
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
01
10 10
©2003 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
FGA50N60LS Rev. A
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGA50N60LS.PDF ] | |
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