NGTB30N60IHLWG Datasheet PDF - ON Semiconductor
| Part Number | NGTB30N60IHLWG | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | ON Semiconductor | |
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NGTB30N60IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• Soft, Fast Free Wheeling Diode
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector
limited by TJmax
current,
Tpulse
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
VCES
IC
ICM
IF
IFM
VGE
PD
TJ
600
60
30
150
60
30
150
$20
250
50
−55 to +150
V
A
A
A
A
V
W
°C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +150
260
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 A, 600 V
VCEsat = 1.8 V
Eoff = 0.28 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
30N60IHL
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N60IHLWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1
Publication Order Number:
NGTB30N60IHLW/D
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| |
 
NGTB30N60IHLWG
TYPICAL CHARACTERISTICS
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
5
1000
100
td(off)
tf
VCE = 400 V
VGE = 15 V
IC = 30 A
TJ = 150°C
15 25 35 45 55 65 75
RG, GATE RESISTOR (W)
Figure 13. Switching Loss vs. RG
85
10
VCE = 400 V
VGE = 15 V
IC = 30 A
1 TJ = 150°C
5 15 25 35 45 55 65
75
RG, GATE RESISTOR (W)
Figure 14. Switching Time vs. RG
85
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
175
1000
td(off)
100
tf
VGE = 15 V
IC = 30 A
RG = 10 W
TJ = 150°C
225 275 325 375 425 475 525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
575
10
1
175
VGE = 15 V
IC = 30 A
RG = 10 W
TJ = 150°C
225 275 325 375 425 475 525
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
575
1000
1000
100
10 dc operation
50 ms
100 ms
100
1
Single Nonrepetitive
Pulse TC = 25°C
0.1 Curves must be derated
linearly with increase
in temperature
0.01 1
10
1 ms
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
1000
10
VGE = 15 V, TC = 125°C
11 10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
http://onsemi.com
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