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PDF NGTB35N60FL2WG Data sheet ( Hoja de datos )
| Número de pieza | NGTB35N60FL2WG | |
| Descripción | IGBT - Field Stop II | |
| Fabricantes | ON Semiconductor | |
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NGTB35N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES 600 V
IC A
70
35
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF A
70
35
Diode Pulsed Current
TPULSE Limited by TJ Max
Pulsed collector current, Tpulse
limited by TJmax
Short−circuit withstand time
VGE = 15 V, VCE = 400 V,
TJ ≤ +150°C
Gate−emitter voltage
Transient gate−emitter voltage
(TPULSE = 5 ms, D < 0.10)
Power Dissipation
@ TC = 25°C
@ TC = 100°C
Operating junction temperature
range
IFM 120 A
ICM 120 A
tSC 5 ms
VGE
$20
V
$30
V
PD W
300
150
TJ −55 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
35 A, 600 V
VCEsat = 1.70 V
EOFF = 0.28 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
35N60FL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NGTB35N60FL2WG TO−247
(Pb−Free)
Shipping
30 Units / Rail
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 2
1
Publication Order Number:
NGTB35N60FL2W/D
1 page  
NGTB35N60FL2WG
TYPICAL CHARACTERISTICS
4
VCE = 400 V
3.5 VGE = 15 V
3
TJ = 150°C
IC = 35 A
2.5
Eon
2
1.5
1 Eoff
0.5
0
5 15 25 35 45 55 65 75
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
10000
1000
td(off)
tf
100
10
5
td(on)
tr
VCE = 400 V
VGE = 15 V
TJ = 150°C
IC = 35 A
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
2
1.8
IC = 35 A
VGE = 15 V
1.6 TJ = 150°C
1.4 Rg = 10 W
Eon
1.2
1
0.8 Eoff
0.6
0.4
0.2
0
150 200 250 300 350 400 450 500 550
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
600
1000
IC = 35 A
VGE = 15 V
TJ = 150°C
Rg = 10 W
100
td(off)
tf
td(on)
tr
10
175 225
275 325
375 425 475 525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
100
10
dc operation
1 ms
100 ms
50 ms
1000
VGE = 15 V, TC = 125°C
100
Single Nonrepetitive
1 Pulse TC = 25°C
Curves must be derated
linearly with increase
0.1 in temperature
1 10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
1000
10
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
www.onsemi.com
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