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Teilenummer | 96NQ03LT |
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Beschreibung | N-channel enhancement mode field-effect transistor | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 14 Seiten PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
Rev. 03 — 23 October 2001
Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP96NQ03LT in SOT78 (TO-220AB)
PHB96NQ03LT in SOT404 (D2-PAK)
PHD96NQ03LT in SOT428 (D-PAK).
2. Features
s Low gate charge
s Low on-state resistance.
3. Applications
s Optimized as a control FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
[1]
mb
mb
3 source (s)
mb mounting base,
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1 3 MBK116
SOT404 (D2-PAK)
2
1
Top view
3
MBK091
SOT428 (D-PAK)
Symbol
g
MBB076
d
s
[1] It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
80
ID Tj = 25 ºC
(A)
60
10 V 5 V 4.5 V 4 V
03af12
3.5 V
80
ID VDS > ID x RDSon
(A)
60
03af14
40 40
3V
20
0
0
VGS = 2.5 V
0.2 0.4 0.6 0.8
1
VDS (V)
20
0
0
175 ºC
Tj = 25 ºC
1234
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.016
RDSon
(Ω)
0.012
Tj = 25 ºC
0.008
0.004
03af13
VGS = 3.5 V
4V
4.5 V
5V
10 V
2
a
1.6
1.2
0.8
0.4
03af18
0
0 20 40 60 80
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0
60 120 180
Tj (ºC)
a = -------R----D----S--o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
6 of 14
6 Page Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
10. Revision history
Table 6: Revision history
Rev Date
CPCN
03 20011023
-
02 20011008
01 20010716
-
-
Description
Includes product data; third version; supersedes second version PHP96NQ03LT of
08 October 2001.
• Table 5 “Characteristics” “Dynamic characteristics” on page 5: Improvements in gate
charge and capacitance.
Includes product data; second version; supersedes initial version PHP96NQ03LT of
2 June 2001.
Product data; initial version
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
12 of 14
12 Page | ||
Seiten | Gesamt 14 Seiten | |
PDF Download | [ 96NQ03LT Schematic.PDF ] |
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