STU13NM60N Datasheet PDF - STMicroelectronics
| Part Number | STU13NM60N | |
| Description | N-CHANNEL Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STF13NM60N, STI13NM60N, STP13NM60N,
STU13NM60N, STW13NM60N
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET
in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages
Datasheet — production data
Features
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
VDSS
(@Tjmax)
650 V
RDS(on)
max
< 0.36 Ω
ID
11 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
TAB
3
2
1
TO-220FP
123
I²PAK
TAB TAB
3
2
1
TO-220
3
2
1
IPAK
3
2
1
TO-247
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
$ OR 4!"
'
3
3#
Table 1. Device summary
Order codes
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STW13NM60N
Marking
13NM60N
Packages
TO-220FP
I²PAK
TO-220
IPAK
TO-247
Packaging
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November 2012
This is information on a product in full production.
Doc ID 15420 Rev 5
1/21
www.st.com
21
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STF/I/P/U/W13NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 19)
Min. Typ. Max. Unit
3 ns
8 ns
--
30 ns
10 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 11 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
11
44
1.5
230
2
18
290
190
17
A
A
V
ns
µC
A
ns
µC
A
Doc ID 15420 Rev 5
5/21
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STU13NM60N electronic component. |
| Information | Total 21 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STU13NM60N.PDF Datasheet ] | |
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