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F12C20C Schematic ( PDF Datasheet ) - Thinki Semiconductor

Teilenummer F12C20C
Beschreibung 12.0 Ampere Common Cathode Fast Recovery Rectifier Diode
Hersteller Thinki Semiconductor
Logo Thinki Semiconductor Logo 



Gesamt 2 Seiten
		
F12C20C Datasheet, Funktion
F12C20C thru F12C60C
®
F12C20C thru F12C60C
Pb
Pb Free Plating Product
12.0 Ampere Common Cathode Fast Recovery Rectifier Diode
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "C"
Case
Negative
Common Anode
Suffix "A"
Case
Doubler
Tandem Polarity
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
F12C20C
F12C20A
F12C20D
200
140
200
F12C40C
F12C40A
F12C40D
400
280
400
12.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
100
Maximum Instantaneous Forward Voltage
@ 6.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
R JC
TJ, TSTG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
F12C60C
F12C60A
F12C60D
600
420
600
UNIT
V
V
V
A
A
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/


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