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Teilenummer | TPC8032-H |
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Beschreibung | Silicon N-Channel MOS Type Field Effect Transistor | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 7 Seiten TPC8032-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPC8032-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 8.4 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 5.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
15
60
1.9
1.0
146
15
0.12
150
−55 to 150
Note 1, Note 2, Note 3 and Note 4: See the next page.
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Downloaded from Elcodis.com electronic components distributor
1
2007-12-25
TPC8032-H
rth – tw
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
100
10
1
0.1
0.01
0.0001
0.001
0.01 0.1
1
Pulse width tw (s)
10
(2)
(1)
Single - pulse
100 1000
Safe operating area
1000
100 ID max (Pulse) *
10 t =10ms *
t =1ms *
1
* Single – pulse Ta = 25℃
Curves must be derated linearly
with increase in temperature.
0.1
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
Downloaded from Elcodis.com electronic components distributor
6
2007-12-25
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ TPC8032-H Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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