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K3298 Schematic ( PDF Datasheet ) - NEC

Teilenummer K3298
Beschreibung MOSFET ( Transistor ) - 2SK3298
Hersteller NEC
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Gesamt 8 Seiten
K3298 Datasheet, Funktion
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 4.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
600
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30 V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±7.5 A
±30 A
Total Power Dissipation (TA = 25°C) PT1
2.0 W
Total Power Dissipation (TC = 25°C) PT2
40 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg 55 to +150 °C
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
7.5 A
37.5 mJ
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000






K3298 Datasheet, Funktion
2SK3298
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
10 IAS = 7.5 A
EAS = 37.5 mJ
1.0
RG = 25
VDD = 150 V
VGS = 20 V 0 V
Starting Tch = 25˚C
0.1
10 µ
100 µ
1m
L - Inductive Load - H
10 m
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.0±0.3
4.5±0.2
φ 3.2±0.2
2.7±0.2
0.7±0.1
2.54 TYP.
1.3±0.2
1.5±0.2
2.54 TYP.
2.5±0.1
0.65±0.1
123
1.Gate
2.Drain
3.Source
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 150 V
RG = 25
100 VGS = 20 V 0 V
IAS 7.5 A
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Body
Diode
Source (S)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6 Data Sheet D14059EJ1V0DS00

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