Datenblatt-pdf.com


JS29F08G08CANB2 Schematic ( PDF Datasheet ) - Intel

Teilenummer JS29F08G08CANB2
Beschreibung SD74 NAND Flash Memory
Hersteller Intel
Logo Intel Logo 




Gesamt 30 Seiten
JS29F08G08CANB2 Datasheet, Funktion
Intel® SD74 NAND Flash Memory
JS29F04G08AANB1, JS29F08G08CANB2, JS29F16G08FANB1
Product Features
Datasheet
„ Single-level cell (SLC) Technology
„ Organization:
— Page size:
x8: 2,112 bytes (2,048 + 64 bytes)
— Block size: 64 pages (128K + 4K bytes)
— Plane size: 2,048 blocks
— Device size: 4Gb: 4,096 blocks; 8Gb: 8,192
blocks; 16Gb: 16,384 blocks
„ Read performance:
— Random read: 25µs (MAX)
— Sequential read: 25ns (MIN)
„ Write performance:
— Page program: 220µs (TYP)
„ Block erase: 1.5ms (TYP)
„ Data Retention:
— 10 years
„ Endurance:
— 100,000 PROGRAM/ERASE cycles
„ First block (block address 00h):
— Guaranteed to be valid up to 1,000
PROGRAM/ERASE cycles
„ Vcc:
— 2.7V – 3.6V
„ Operating Temperature:
— -25 oC to 85 oC
„ Command set:
— Industry-standard basic NAND Flash
command set
„ Advanced Command Set:
— Two-plane commands
— Interleaved die operation
— READ UNIQUE ID (contact factory)
— Internal Data Move: Operations supported
within the plane from which data is read
„ Operation status byte:
— Provides software method for detecting:
— Operation completion
— Pass/fail condition
— Write-protect status
„ Ready/busy# (R/B#) signal:
— Provides a hardware method for detecting
PROGRAM or ERASE cycle completion
„ WP# signal:
— Write protect entire device
„ RESET:
— Required after power-up
„ Package Types:
— 48-pin TSOP Type 1
„ Configuration:
# of Die
1
2
4
# of CE# # of R/B#
11
22
22
I/O
Common
Common
Common
Order Number: 312774-012US
March 2007






JS29F08G08CANB2 Datasheet, Funktion
Intel® SD74 NAND Flash Memory
1.0
2.0
2.1
Introduction
NAND Flash technology provides a cost-effective solution for applications requiring
high-density solid-state storage. The JS29F4G08AANB1 is a 4Gb NAND Flash memory
device. The JS29F08G08CANB2 is a two-die stack that operate as two independent 4Gb
devices, providing a total storage capacity of 8Gb in a single package. The
JS29F16G08FANB1 is a four-die stack that operate as two independent 8Gb devices,
providing a total storage capacity of 16Gb in a single, space-saving package. Intel®
NAND Flash devices include standard NAND Flash features as well as new features
designed to enhance system-level performance.
Intel® NAND Flash device uses a highly multiplexed 8-bit bus (I/O[7:0]) to transfer
data, addresses, and instructions. The five command pins (CLE, ALE, CE#, RE#, WE#)
implement the NAND Flash command bus interface protocol. Additional pins control
hardware write protection (WP#) and monitor device status (R/B#).
This hardware interface creates a low-pin-count device with a standard pinout that is
the same from one density to another, allowing future upgrades to higher densities
without board redesign.
The Intel® SD74 NAND Flash Memory device contains two planes per die. Each plane
consists of 2,048 blocks. Each block is subdivided into 64 programmable pages. Each
page consists of 2,112 bytes. The pages are further divided into a 2,048-byte data
storage region with a separate 64-byte area. The 64-byte area is typically used for
error management functions.
The contents of each page can be programmed in 220µs, and an entire block can be
erased in 1.5ms (TYP). The Intel® SD74 NAND Flash Memory device is a high
performance part with a maximum tPROG specification of 500µs, a maximum tBERS
specification of 2ms, and a maximum tR specification of 25µs. On-chip control logic
automates PROGRAM and ERASE operations to maximize cycle endurance. ERASE/
PROGRAM endurance is specified at 100,000 cycles when using appropriate error
correcting code (ECC) and error management.
Functional Overview
This section provides an overview of the device in the following sections:
Section 2.1, “Architecture” on page 6
Section 2.2, “Memory Map and Addressing” on page 7
Architecture
These devices use standard NAND Flash electrical and command interfaces. Data,
commands, and addresses are multiplexed onto the same signals and received by I/O
control circuits. This provides a memory device with a low signal count. The commands
received at the I/O control circuits are latched by a command register and are
transferred to control logic circuits for generating internal signals to control device
operations. The addresses are latched by an address register and sent to a row decoder
or a column decoder to select a row address or a column address, respectively.
The data is transferred to or from the NAND Flash memory array, byte by byte through
a data register and a cache register. The cache register is closest to I/O control circuits
and acts as a data buffer for the I/O data, whereas the data register is closest to the
memory array and acts as a data buffer for the NAND Flash memory array operation.
Intel® SD74 NAND Flash Memory
Datasheet
6
March 2007
Order Number: 312774-012US

6 Page









JS29F08G08CANB2 pdf, datenblatt
Intel® SD74 NAND Flash Memory
Table 4.
Signal Descriptions (Sheet 2 of 2)
Symbol
WP#
I/O[7:0]
R/B#, R/B2#
VCC
VSS
NC
DNU
Type
Input
I/O
Output
Supply
Supply
Description
Write protect: Protects against inadvertent PROGRAM and ERASE
operations. All PROGRAM and ERASE operations are disabled when WP# is
LOW.
Data inputs/outputs: The bidirectional I/Os transfer address, data, and
instruction information. Data is output only during READ operations; at
other times the I/Os are inputs.
Ready/busy: An open-drain, active-LOW output, that uses an external
pull-up resistor. R/B# is used to indicate when the chip is processing a
PROGRAM or ERASE operation. It is also used during READ operations to
indicate when data is being transferred from the array into the serial data
register. When these operations have completed, R/B# returns to the
high-Z state. In the 8Gb and 16Gb configurations, R/B# is for the memory
enabled by CE#; R/B2# is for the memory enabled by CE2#.
VCC: Power supply.
VSS: Ground connection.
No connect: NCs are not internally connected. They can be driven or left
unconnected.
Do not use: DNUs must be left unconnected.
§§
Intel® SD74 NAND Flash Memory
Datasheet
12
March 2007
Order Number: 312774-012US

12 Page





SeitenGesamt 30 Seiten
PDF Download[ JS29F08G08CANB2 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
JS29F08G08CANB1(JS29FxxG08xANB1) SD74 NAND Flash MemoryIntel
Intel
JS29F08G08CANB2SD74 NAND Flash MemoryIntel
Intel

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche