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PDF 2N03L05 Data sheet ( Hoja de datos )
| Número de pieza | 2N03L05 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N03L05 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Product Summary
VDS
RDS(on)
ID
30 V
5.2 mΩ
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-05
SPB80N03S2L-05
SPI80N03S2L-05
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4033
Q67042-S4032
Q67042-S4093
Marking
2N03L05
2N03L05
2N03L05
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
325
16
6
±20
167
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-24
1 page  
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP80N03S2L-05
190 Ptot = 167W
Ai
hgf e
160
140
120
100
80
VGS [V]
a 2.5
b 3.0
c 3.5
d 4.0
d e 4.5
f 5.0
g 5.5
h 6.0
i 10.0
60 c
40
20 b
0
0 0.5
1 1.5
2 2.5
3
a
3.5 4
V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
250
A
200
175
150
125
100
75
50
25
0
0
1
2
3
4V
6
VGS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP80N03S2L-05
16
mΩ c
d
12
10
8
e
6
f
4
g
i
h
2 VGS [V] =
c d ef
3.5 4.0 4.5 5.0
ghi
5.5 6.0 10.0
0
0 20 40 60 80
100
A 140
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
140
S
100
80
60
40
20
0
0
25 50
75 100 125 150 175 200 A 250
ID
Page 5
2003-04-24
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N03L05.PDF ] | |
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