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NTMFS4926NT1G Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NTMFS4926NT1G
Beschreibung Power MOSFET ( Transistor )
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 7 Seiten
NTMFS4926NT1G Datasheet, Funktion
NTMFS4926N
Power MOSFET
30 V, 44 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
15.5
9.8
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
2.70 W
23.4 A
14.8
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
6.13 W
9.0 A
5.7
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
0.92 W
44 A
28
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
21.6 W
182 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 20 V,
IL = 21 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
100
55 to
+150
21
6.0
22
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 5
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
7.0 mW @ 10 V
11.2 mW @ 4.5 V
D (5,6)
ID MAX
44 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S
S
4926N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4926NT1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4926NT3G SO8 FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4926N/D






NTMFS4926NT1G Datasheet, Funktion
NTMFS4926N
TYPICAL CHARACTERISTICS
100
D = 0.5
10 0.2
0.1
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 13. Thermal Response
10 100 1000
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