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Y35KPC Schematic ( PDF Datasheet ) - TECHSEM

Teilenummer Y35KPC
Beschreibung PHASE CONTROL THYRISTOR
Hersteller TECHSEM
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Gesamt 3 Seiten
Y35KPC Datasheet, Funktion
Features
n Center amplifying gate
n Metal case with ceramic insulator
n Low on-state and switching losses
Typical Applications
n AC controllers
n DC and AC motor control
n Controlled rectifiers
Y35KPC
PHASE CONTROL THYRISTOR
IT(AV)
VDRM/VRRM
ITSM
I2t
1076A
400~1000V
11 KA
605 103A2S
SYMBOL
CHARACTERISTIC
IT(AV)
Mean on-state current
TEST CONDITIONS
Tj(°C)
Min
VALUE
Type Max
180° half sine wave 50Hz
Double side cooled,
Ths=55°C
Ths=102°C
125
1076
500
UNIT
A
VDRM
VRRM
IDRM
IRRM
ITSM
I2t
VTO
rT
VTM
dv/dt
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM&VRRM tp=10ms
VDSM&VRSM= VDRM&VRRM+100V
Repetitive peak current
Surge on-state current
I2T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
VDM= VDRM
VRM= VRRM
10ms half sine wave
VR=0.6VRRM
ITM=1500A, F=15KN
Critical rate of rise of off-state voltage VDM=0.67VDRM
125 400
125
125
125
125
125
1000
V
40 mA
11.0
605
0.80
0.40
1.80
KA
A2s*103
V
m
V
1000
V/μs
di/dt
Irm
trr
Qrr
IGT
VGT
IH
VGD
Rth(j-h)
Fm
Tstg
Wt
Outline
Critical rate of rise of on-state current
VDM= 67%VDRM to 1300A,
Gate pulse tr 0.5μs IGM=1.5A
Reverse recovery current
Reverse recovery time
Recovery charge
Gate trigger current
Gate trigger voltage
Holding current
ITM=700A,tp=1000µs, di/dt=-20A/µs,
VR =50V
VA=12V, IA=1A
Non-trigger gate voltage
Thermal resistance
Junction to heat sink
Mounting force
Stored temperature
W eight
VDM=67%VDRM
At 1800 sine, double side cooled
Clamping force 15KN
KT33cT
125 500 A/μs
125
35
25 0.8
137
15
1027
250
2.5
A
µs
µC
mA
V
20 200 mA
125 0.3
V
0.035 °C /W
10
-40
260
20
140
KN
°C
g
http://www.tech-sem.com
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