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PDF HX4N60 Data sheet ( Hoja de datos )
| Número de pieza | HX4N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | TIANJIN HUANXIN TECHNOLOGY | |
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HX4N60
4.4A mps，600Volts
N-Channel MOSFET
Power MOSFET
■ Description
The HX4N60 N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
z RDS(ON) =2.50Ω@VGS = 10 V
z Low gate charge ( typical 16nC)
z High ruggedness
z Fast switching capability
z Avalanche energy specified
z Improved dv/dt capability
■ Symbol
■ Ordering Information
Order Number
Normal
Lead Free Plating
HX4N60-TA3-T
HX4N60L-TA3-T
HX4N60-TF3-T
HX4N60L-TF3-T
HX4N60-TM3-T
HX4N60L-TM3-T
HX4N60-TN3-T
HX4N60L-TN3-T
HX4N60-TN3-R
HX4N60L-TN3-R
Note:Pin Assignment: G:Gate D:Drain S:Source
HX4N60L-TA3-T
（1）Packing Type
（2）Package Type
（3）Lead Plating
Package
TO-220
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
1 23
G DS
G DS
G DS
G DS
G DS
Packing
Tube
Tube
Tube
Tube
Tape Reel
(1)T:Tube,R:Tape Reel
(2)TA3:TO-220,TF3:TO-220F, TM3: TO-251,TN3: TO-252
(3)L:Lead Free Plating Blank：Pb/Sn
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
TO-220
Ratings
TO-220F TO-251 TO-252
Drain-Source Voltage
VDSS
600
Gate-Source Voltage
Drain Currenet
Continuous
Drain Current Pulsed
Tc=25℃
Tc=100℃
(Note 1)
Avalanche
Energy
Repetitive
Single Pulse
(Note 1)
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
VGSS
ID
IDP
EAR
EAS
dv/dt
±30
4.4 4.4
2.8 2.8
17.6
17.6＊
10.6
260
4.5
2.8
1.8
11.2
4.9
Total Power
Dissipation
Tc=25℃
Derate above 25℃
PD
100 33
0.8 0.26
49
0.39
Junction Temperature
Storage Temperature
＊Drain current limited by maximum junction temperature.
TJ
TSTG
+150
-55~+150
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
1
1 page  
HX4N60
■ Typical Characteristics (Continued)
Power MOSFET
Figure 11-1. Transient Thermal Response Curve TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
Figure 11-3. Transient Thermal Response Curve for TO251/ TO252
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HX4N60.PDF ] | |
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