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Teilenummer | SL03N06 |
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Beschreibung | 60V/3A N-Channel Advanced Power MOSFET | |
Hersteller | ETC | |
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Gesamt 4 Seiten Features
♦Low On-Resistance
♦Fast Switching
♦High Effective
♦Lead-Free, RoHS Compliant
SL03N06
60V/3A N-Channel Advanced Power MOSFET
Description
SL03N06 designed by the trench processing techniques to
achieve extremely low on-resistance. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely
efficient and reliable device for use in Switch applications
and a wide variety of other small power supply applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
TSTG
IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDM Pulse Drain Current Tested ①
ID Continuous Drain current@VGS=4.5V ②
PD Maximum Power Dissipation
RθJA Thermal Resistance Junction-Ambient
Rating
TC =25°C
±20
60
175
-55 to 155
3
TC =25°C
TC =25°C
TC =25°C
12
3
1.75
155
Unit
V
V
°C
°C
A
A
A
W
°C/W
Page - 1 - Total 4
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ SL03N06 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
SL03N06 | 60V/3A N-Channel Advanced Power MOSFET | ETC |
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