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G8372-01 Schematic ( PDF Datasheet ) - Hamamatsu Corporation

Teilenummer G8372-01
Beschreibung InGaAs PIN photodiode
Hersteller Hamamatsu Corporation
Logo Hamamatsu Corporation Logo 




Gesamt 4 Seiten
G8372-01 Datasheet, Funktion
PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features
l Cut-off wavelength: 2.1 µm
l 3-pin TO-18 package: low price
l TE-cooled type TO-8 package: low dark current
l Active area: B0.3 to B3 mm
Applications
l Gas analyzer
l Water content analyzer
l NIR (Near Infrared) photometry
s Specifications / Absolute maximum ratings
Type No.
D im e n s io n a l
outline
Package
Cooling
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
TO-18
Non-cooled
TO-5
TO-8
One-stage
TE-cooled
TO-8
Two-stage
TE-cooled
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current
VR
Topr
Tstg
(A) (V) (°C)
(°C)
--
-40 to +85 -55 to +125
1.5 2
0.2 -40 to +70 -55 to +85
1.0
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement
condition
Element
Te m pe ra tu re
T
Spectral
response
range
λ
Peak Photo
sensitivity sensitivity
wavelength S
λp λ=λp
Dark current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D
λ=λp
NEP
λ=λp
G8422-03
Typ. Max.
(°C)
(µm)
(µm)
(A/W) (nA) (nA) (MHz) (pF)
(M) (cm ·H z1/2/W ) (W/Hz1/2)
55 550 100
8
0.9
1.5 × 10-13
G8422-05
G8372-01
25 0.9 to 2.1
125 1250
500 5000
80
40
20
80
0.3
0.1
2.5
×
1011
2.5 × 10-13
4 × 10-13
G8372-03
5 (µA) 50 (µA) 3
800 0.01
1.5 × 10-12
G5852-103
G5852-11
5.5 55
100
-10 0.9 to 2.07 1.95
1.2
50 500
40
8
80
9 5 × 10-14
1 8 × 1011 1 × 10-13
G5852-13
500 5000
3
800 0.1
4 × 10-13
G5852-203
3 30 100
8
18
3 × 10-14
G5852-21
-20 0.9 to 2.05
25 250
40
80
2 1.2 × 1012 8 × 10-14
G5852-23
250 2500
3
800 0.2
3 × 10-13
1





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