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KF11N50F Schematic ( PDF Datasheet ) - KEC

Teilenummer KF11N50F
Beschreibung N CHANNEL MOS FIELD EFFECT TRANSISTOR
Hersteller KEC
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Gesamt 7 Seiten
KF11N50F Datasheet, Funktion
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 500V, ID= 11A
Drain-Source ON Resistance :
RDS(ON)=0.52 (Max) @VGS = 10V
Qg(typ.) = 26nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF11N50P KF11N50F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
11 11*
7 7*
33 33*
400
6.6
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
178
1.43
46.3
0.37
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
0.7
62.5
2.7
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF11N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF11N50P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF11N50F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
EQUIVALENT CIRCUIT
D
TO-220IS (1)
G
2011. 8. 31
S
Revision No : 0
1/7






KF11N50F Datasheet, Funktion
KF11N50P/F
Fig14. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Fig15. Single Pulsed Avalanche Energy
50V
25
10 V VGS
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig16. Resistive Load Switching
0.5 VDSS
25
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2011. 8. 31
Revision No : 0
6/7

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