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PDF MGT801 Data sheet ( Hoja de datos )

Número de pieza MGT801
Descripción LED
Fabricantes Seoul Semiconductor　
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No Preview Available ! MGT801 Hoja de datos, Descripción, Manual

Specification
MGT801
SSC
Drawn
Approval
CUSTOMER
Approval
Rev. 01
July 2009
www.acriche.com
Document No. : SSC-QP-7-07-24 (Rev.00)

1 page




MGT801 pdf
2. Absolute maximum ratings
Parameter
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
Pd
IF
IFM *2
VR
Topr
Tstg
Value
123
30
90
5
-40 ~ +100
-40 ~ +100
Unit
mW
mA
mA
V
oC
oC
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 IFM was measured at TW ≤ 1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electric characteristics
Parameter
Forward Voltage
Reverse Current
Luminance Intensity *1
Peak Wavelength
Dominant Wavelength
Spectral Bandwidth 50%
Viewing Angle *2
Symbol
VF
IR
IV
λP
λd
∆λ
2θ ½
Condition
IF =20mA
VR=5V
IF =20mA
IF =20mA
IF =20mA
IF =20mA
IF =20mA
Min
2.7
-
360
-
519
-
-
Typ Max
3.4 4.1
- 10
525 690
518 -
527 536
18 -
120 -
Unit
V
µA
mcd
nm
nm
nm
deg.
*1. The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of
the LED package. Luminous Intensity Measurement allowance is ±10%
*2. 2θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity.
Rev. 01
July 2009
www.acriche.com
Document No. : SSC-QP-7-07-24 (Rev.00)

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