Datenblatt-pdf.com


G4D Schematic ( PDF Datasheet ) - General Semiconductor

Teilenummer G4D
Beschreibung GLASS PASSIVATED JUNCTION RECTIFIER
Hersteller General Semiconductor
Logo General Semiconductor Logo 




Gesamt 2 Seiten
G4D Datasheet, Funktion
G4A THRU G4J
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
Case Style G4
0.180 (4.6)
0.115 (2.9)
DIA.
0.042 (1.07)
0.038 (0.962)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
MAX.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
*Brazed-lead assembly is covered by Patent No. 3,930,306
FEATURES
High temperature metallurgically bonded
construction
Glass passivated cavity-free junction
Hermetically sealed package
3.0 Ampere operation
at TA=75°C with no
thermal runaway
Typical IR less than 0.1µA
Capable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
350°C/10 seconds 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.037 ounce,1.04 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current, 0.375”
(9.5mm) lead length at TA=70°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum full load reverse current full cycle
average, 0.375” (9.5mm) lead length at TA=70°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Typical reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
G4A
50
35
50
IFSM
VF
IR(AV)
IR
trr
CJ
RΘJA
RΘJL
TJ, TSTG
G4B
G4D
G4G
100 200 400
70 140 280
100 200 400
3.0
100.0
1.1
200.0
1.0
100.0
3.0
40.0
22.0
12.0
-65 to +175
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm)
lead length with both leads mounted between heatsinks
G4J UNITS
600 Volts
420 Volts
600 Volts
Amps
Amps
Volts
µA
µA
µs
pF
°C/W
°C
4/98





SeitenGesamt 2 Seiten
PDF Download[ G4D Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
G40Voltage-Controlled Attenuator ModuleTyco Electronics
Tyco Electronics
G4000EC450Anode Shorted Gate Turn-Off ThyristorIXYS
IXYS
G400SDSCHOTTKY BARRIER DIODEGTM
GTM
G401SDSCHOTTKY BARRIER DIODEGTM
GTM
G402SDSCHOTTKY BARRIER DIODEGTM
GTM

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche