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AS081Q5000W Schematic ( PDF Datasheet ) - Roithner

Teilenummer AS081Q5000W
Beschreibung High Power Stacked Infrared Laser Diode Array
Hersteller Roithner
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AS081Q5000W Datasheet, Funktion
AS081Q5000W
TECHNICAL DATA
High Power Stacked Infrared Laser Diode Array
Features
Output Power: 5000 W qCW
780-830 nm Emission Wavelength
Spectral Width: 4 nm
High Reliability, High Efficiency
QCW stack can be designed according to the
customer of non-standard products heat sink
package
Applications
Laser Pumping
Medical Usage
High power laser diode applications
Specifications (25°C)
Item
Optical Specifications
qCW Output Power
qCW Output Power / Bar
Array Length
Center Wavelength
Wavelength Tolerance
Spectral Width
Package Style
Bar Length
Number of Bars
Wavelength Temperature Coefficient
Beam Divergence
Electrical Specifications
Slope Efficiency
Conversion Efficiency
Threshold Current
Operating Current
Operating Voltage
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
PO
PS
L
λC
Δλ
θ×θ
ES
NS
ITH
IF
UF
UR
TOP
TSTG
Value
5000
100
10
780-830
±5
4
Micro Channel
0.5
50
0.3
40x8
1
40%
25
120
100
2.5
+10 … +40
-40 ... +85
Unit
W
W
mm
nm
nm
nm
mm
nm/°C
deg
W/A
A
A
V
V
°C
°C
20.09.2010
AS081Q5000W
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