Datenblatt-pdf.com


AL081C200W Schematic ( PDF Datasheet ) - Roithner

Teilenummer AL081C200W
Beschreibung High Power Linear Infrared Laser Diode Array
Hersteller Roithner
Logo Roithner Logo 




Gesamt 3 Seiten
AL081C200W Datasheet, Funktion
AL081C200W
TECHNICAL DATA
High Power Linear Infrared Laser Diode Array
Features
Output Power: 200 W
780-830 nm Emission Wavelength
Spectral Width: 4 nm
High Reliability, High Efficiency
Applications
Laser Pumping
Medical Usage
High power laser diode applications
Specifications (25°C)
Item
Optical Specifications
CW Output Power
Output Power / Bar
Array Length
Center Wavelength
Wavelength Tolerance
Spectral Width
Number of Bars
Wavelength Temperature Coefficient
Beam Divergence
Electrical Specifications
Slope Efficiency
Conversion Efficiency
Threshold Current
Operating Current
Operating Voltage
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
PO
PS
L
λC
Δλ
θ×θ
ES
NS
ITH
IF
UF
UR
TOP
TSTG
Value
200
40
57
780-830
±5
4
5
0.3
40x8
1
40%
12
52
10
2.5
+10 … +40
-40 ... +85
Unit
W
W
mm
nm
nm
nm
nm/°C
deg
W/A
A
A
V
V
°C
°C
20.09.2010
AL081C200W
1 of 3





SeitenGesamt 3 Seiten
PDF Download[ AL081C200W Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
AL081C200WHigh Power Linear Infrared Laser Diode ArrayRoithner
Roithner

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche