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PDF ME06N10-G Data sheet ( Hoja de datos )
| Número de pieza | ME06N10-G | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
FEATURES
● RDS(ON)≦200mΩ@VGS=10V
● RDS(ON)≦260mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
Top View
Ordering Information: ME06N10 (Pb-free)
ME06N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current
TC=25℃
TC=70℃
ID
Pulsed Drain Current
IDM
Maximum Power Dissipation
TC=25℃
TC=70℃
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance-Junction to Case*
* The device mounted on 1in2 FR4 board with 2 oz copper
RθJC
Maximum Ratings
100
±20
7.2
5.7
28.8
16.6
10.6
-55 to 150
7.5
Unit
V
V
A
A
W
℃
℃/W
Dec, 2013 Ver1.0
01
1 page  
N-Channel 100-V (D-S) MOSFET
ME06N10/ME06N10-G
TO252-3L Package Outline
SYMBOL
A
B
C
D
D1
E
E1
L1
L2
L3
H
P
MIN
2.10
0.40
0.40
5.30
2.20
6.30
4.80
0.90
0.50
0.00
8.90
2.30 BSC
MAX
2.50
0.90
0.90
6.30
2.90
6.75
5.50
1.80
1.10
0.20
10.40
Dec, 2013 Ver1.0
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME06N10-G.PDF ] | |
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| ME06N10-G | N-Channel 100-V (D-S) MOSFET | Matsuki |
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