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Teilenummer | ME25N06-G |
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Beschreibung | N-Channel Enhancement MOSFET | |
Hersteller | Matsuki | |
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Gesamt 5 Seiten N-Channel Enhancement MOSFET
GENERAL DESCRIPTION
The ME25N06 is the N-Channel logic enhancement mode power
field effect transistors are produced using high cell density, DMOS
trench technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
ME25N06(-G)
FEATURES
● RDS(ON)≦62mΩ@VGS=10V
● RDS(ON)≦86mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● DC/DC Converter
● Load Switch
● LCD Display inverter
PIN CONFIGURATION
(TO-252)
Top View
e Ordering Information: ME25N06 (Pb-free)
ME25N06-G (Green product)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25℃
Current(Tj=150℃)
TC=70℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃
TC=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Case *
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJC
* The device mounted on 1in2 FR4 board with 2 oz copper
Rating
60
±25
16
13
65
25
16
-55 to 150
Steady State
5
Unit
V
V
A
A
W
℃
℃/W
Dec,2008-Ver1.0
01
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ ME25N06-G Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
ME25N06-G | N-Channel Enhancement MOSFET | Matsuki |
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