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Número de pieza | TPH2900ENH | |
Descripción | Silicon N-channel MOSFET | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TPH2900ENH (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH2900ENH
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 8.2 nC (typ.)
(3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V)
(5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPH2900ENH
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 200 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
36 A
Drain current (DC)
(Continuous)
(Note 1)
ID
33
Drain current (pulsed)
(t = 1 ms)
(Note 1)
IDP
102
Power dissipation
(Tc = 25 )
PD 78 W
Power dissipation
(t = 10 s)
(Note 3)
PD
2.8
Power dissipation
(t = 10 s)
(Note 4)
PD
1.6
Single-pulse avalanche energy
(Note 5)
EAS
176 mJ
Avalanche current
IAR 33 A
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2013-10-02
Rev.1.0
1 page 8. Characteristics Curves (Note)
TPH2900ENH
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5 2013-10-02
Rev.1.0
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet TPH2900ENH.PDF ] |
Número de pieza | Descripción | Fabricantes |
TPH2900ENH | Silicon N-channel MOSFET | Toshiba |
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