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PV218N50 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer PV218N50
Beschreibung 500V N-Channel MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
PV218N50 Datasheet, Funktion
QFET®
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
Features
• 550V @TJ = 150°C
• Typ. RDS(on) = 0.265@VGS = 10 V
• Low gate charge (typical 42 nC)
• Low Crss (typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies, active power factor correc-
tion, electronic lamp ballast based on half bridge topology.
GDS
TO-220
FQP Series
GD S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220F
FQPF Series
G{
D
{
◀▲
{
S
FQP18N50V2 FQPF18N50V2
500
18 18*
12.1 12.1*
72 72*
± 30
330
18
25
4.5
208 69
1.67 0.55
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQP18N50V2/FQPF18N50V2 Rev. D
1
www.fairchildsemi.com






PV218N50 Datasheet, Funktion
Gate Charge Test Circuit & Waveform
12V
10V
50KΩ
200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
Qg
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
FQP18N50V2/FQPF18N50V2 Rev. D
6
www.fairchildsemi.com

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