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B710 Schematic ( PDF Datasheet ) - Panasonic Semiconductor
| Teilenummer | B710 |
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| Beschreibung | PNP Transistor - 2SB710 | |
| Hersteller | Panasonic Semiconductor | |
| Logo |  |
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Gesamt 3 Seiten 
Transistors
2SB0710 (2SB710), 2SB0710A (2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
■ Features
• Large collector current IC
• Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0710 VCBO
2SB0710A
−30
−60
Collector-emitter voltage 2SB0710 VCEO
(Base open)
2SB0710A
−25
−50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
−5
− 0.5
−1
200
150
−55 to +150
■ Electrical Characteristics Ta = 25°C ± 3°C
Unit
V
V
V
A
A
mW
°C
°C
0.40+–00..0150
3
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
• 2SB0710: C
• 2SB0710A: D
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0710
2SB0710A
2SB0710
2SB0710A
VCBO
VCEO
IC = −10 µA, IE = 0
IC = −10 mA, IB = 0
−30
−60
−25
−50
V
V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1 µA
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −150 mA
85 340
hFE2 VCE = −10 V, IC = −500 mA
40
Collector-emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA
− 0.35 − 0.60 V
Base-emitter saturation voltage *1
VBE(sat) IC = −300 mA, IB = −30 mA
−1.1 −1.5
V
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
hFE1
Marking 2SB0710
Q
85 to 170
CQ
R
120 to 240
CR
S
170 to 340
CS
No-rank
85 to 340
C
Product of no-rank is not
classified and have no
marking symbol for rank.
symbol 2SB0710A
DQ
DR
DS
D
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJC00048CED
1
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| Seiten | Gesamt 3 Seiten | |
| PDF Download | [ B710 Schematic.PDF ] | |
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