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MRF7S38075HSR3 Schematic ( PDF Datasheet ) - Freescale Semiconductor

Teilenummer MRF7S38075HSR3
Beschreibung RF Power Field Effect Transistors
Hersteller Freescale Semiconductor
Logo Freescale Semiconductor Logo 




Gesamt 12 Seiten
MRF7S38075HSR3 Datasheet, Funktion
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
Typical WiMAX Performance: VDD = 30 Volts, IDQ
12 Watts Avg., f = 3400 and 3600 MHz, 802.16d,
MHz Channel Bandwidth, Input Signal PAR = 9.5
6d=4B9Q@0A0M0m.0A31/,4%P, 4oPubtro=ubrsatbsi,lit7y
on CCDF.
Power Gain — 14 dB
Drain Efficiency — 14%
Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW
Peak Tuned Output Power
Pout @ 1 dB Compression Point w 75 Watts CW
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S38075H
Rev. 0, 8/2007
MRF7S38075HR3
MRF7S38075HSR3
3400 - 3600 MHz, 12 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S38075HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S38075HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
VDS - 0.5, +65 Vdc
VGS - 6.0, +10 Vdc
VDD 32, +0 Vdc
Tstg - 65 to +150 °C
TC 150 °C
TJ 225 °C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 86°C, 74 W CW
Case Temperature 69°C, 12 W CW
RθJC
0.46
0.49
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
1






MRF7S38075HSR3 Datasheet, Funktion
TYPICAL CHARACTERISTICS
15.5 16
15 ηD
14
14.5
V64DDQ=AM303V/4d,c4,
Pout = 12
Bursts, 7
W (Avg.), IDQ
MHz Channel
= 900 mA, 802.16d
Bandwidth, Input
12
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
14 10
Gps
13.5
− 47
IRL
13 −49
−8
− 12
12.5 ACPR−U
−51 −16
12
ACPR −L
−53 −20
11.5 −55
3400 3425 3450 3475 3500 3525 3550 3575 3600
− 24
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance @ Pout = 12 Watts Avg.
15 24
14.5 ηD 22
14
13.5
13
V64DDQ=AM303V/4d,c4,
Pout = 23
Bursts, 7
W (Avg.), IDQ
MHz Channel
= 900 mA, 802.16d
Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
Gps
20
18
− 38
12.5 −40
IRL
12
ACPR −L
− 42
11.5 −44
ACPR − U
11 −46
3400 3425 3450 3475 3500 3525 3550 3575 3600
−8
− 12
− 16
− 20
− 24
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 23 Watts Avg.
16
IDQ = 1350 mA
15
1125 mA
14
900 mA
13
675 mA
12
450 mA
11
VDD = 30 Vdc, IDQ = 900 mA
10 f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
9
1 10 100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
VDD = 30 Vdc, IDQ = 900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
− 20
IDQ = 450 mA
− 30
675 mA
− 40
900 mA
1350 mA
1125 mA
− 50
1
10 100 200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S38075HR3 MRF7S38075HSR3
6
RF Device Data
Freescale Semiconductor

6 Page









MRF7S38075HSR3 pdf, datenblatt
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© Freescale Semiconductor, Inc. 2007. All rights reserved.
MRF7S38075HR3 MRF7S38075HSR3
Document Number: MRF7S38075H
1R2ev. 0, 8/2007
RF Device Data
Freescale Semiconductor

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