MRF7S38075HR3 Schematic - Freescale Semiconductor

MRF7S38075HR3 Schematic ( PDF Datasheet ) - Freescale Semiconductor

Teilenummer	MRF7S38075HR3
Beschreibung	RF Power Field Effect Transistors
Hersteller	Freescale Semiconductor
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Gesamt 12 Seiten Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, MHz Channel Bandwidth, Input Signal PAR = 9.5 6d=4B9Q@0A0M0m.0A31/,4%P, 4oPubtro=ubrsatbsi,lit7y on CCDF. Power Gain — 14 dB Drain Efficiency — 14% Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 75 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF7S38075H Rev. 0, 8/2007 MRF7S38075HR3 MRF7S38075HSR3 3400 - 3600 MHz, 12 W AVG., 30 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S38075HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S38075HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics VDS - 0.5, +65 Vdc VGS - 6.0, +10 Vdc VDD 32, +0 Vdc Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 86°C, 74 W CW Case Temperature 69°C, 12 W CW RθJC 0.46 0.49 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRF7S38075HR3 MRF7S38075HSR3 1 TYPICAL CHARACTERISTICS 15.5 16 15 ηD 14 14.5 V64DDQ=AM303V/4d,c4, Pout = 12 Bursts, 7 W (Avg.), IDQ MHz Channel = 900 mA, 802.16d Bandwidth, Input 12 Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 14 10 Gps 13.5 − 47 IRL 13 −49 −8 − 12 12.5 ACPR−U −51 −16 12 ACPR −L −53 −20 11.5 −55 3400 3425 3450 3475 3500 3525 3550 3575 3600 − 24 f, FREQUENCY (MHz) Figure 3. WiMAX Broadband Performance @ Pout = 12 Watts Avg. 15 24 14.5 ηD 22 14 13.5 13 V64DDQ=AM303V/4d,c4, Pout = 23 Bursts, 7 W (Avg.), IDQ MHz Channel = 900 mA, 802.16d Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF Gps 20 18 − 38 12.5 −40 IRL 12 ACPR −L − 42 11.5 −44 ACPR − U 11 −46 3400 3425 3450 3475 3500 3525 3550 3575 3600 −8 − 12 − 16 − 20 − 24 f, FREQUENCY (MHz) Figure 4. WiMAX Broadband Performance @ Pout = 23 Watts Avg. 16 IDQ = 1350 mA 15 1125 mA 14 900 mA 13 675 mA 12 450 mA 11 VDD = 30 Vdc, IDQ = 900 mA 10 f1 = 3495 MHz, f2 = 3505 MHz Two −Tone Measurements, 10 MHz Tone Spacing 9 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power − 10 VDD = 30 Vdc, IDQ = 900 mA f1 = 3495 MHz, f2 = 3505 MHz Two −Tone Measurements, 10 MHz Tone Spacing − 20 IDQ = 450 mA − 30 675 mA − 40 900 mA 1350 mA 1125 mA − 50 1 10 100 200 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF7S38075HR3 MRF7S38075HSR3 6 RF Device Data Freescale Semiconductor 6 Page How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF7S38075HR3 MRF7S38075HSR3 Document Number: MRF7S38075H 1R2ev. 0, 8/2007 RF Device Data Freescale Semiconductor 12 Page
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Teilenummer	Beschreibung	Hersteller
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