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PDF FOD3150 Data sheet ( Hoja de datos )
| Número de pieza | FOD3150 | |
| Descripción | Gate Drive Optocoupler | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2011
FOD3150
High Noise Immunity, 1.0A Output Current,
Gate Drive Optocoupler
Features
■ High noise immunity characterized by 20kV/µs
minimum common mode rejection
■ Use of P-channel MOSFETs at output stage enables
output voltage swing close to the supply rail
■ Wide supply voltage range from 15V to 30V
■ Fast switching speed
– 500ns max. propagation delay
– 300ns max. pulse width distortion
■ Under Voltage LockOut (UVLO) with hysteresis
■ Extended industrial temperate range, -40°C to 100°C
temperature range
■ Safety and regulatory approvals
– UL1577, 5000 VRMS for 1 min.
– IEC60747-5-2
■ >8.0mm clearance and creepage distance (option ‘T’)
Applications
■ Industrial inverter
■ Uninterruptible power supply
■ Induction heating
■ Isolated IGBT/Power MOSFET gate drive
Description
The FOD3150 is a 1.0A Output Current Gate Drive
Optocoupler, capable of driving most 800V/20A
IGBT/MOSFET. It is ideally suited for fast switching
driving of power IGBT and MOSFETs used in motor
control inverter applications, and high performance
power system.
It utilizes Fairchild’s patented coplanar packaging
technology, Optoplanar®, and optimized IC design to
achieve high noise immunity, characterized by high
common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light
emitting diode optically coupled to an integrated circuit
with a high-speed driver for push-pull MOSFET output
stage.
Related Resources
■ FOD3120, 2.5A Output Current, Gate Drive
Optocoupler Datasheet
■ www.fairchildsemi.com/products/opto/
Functional Block Diagram
Package Outlines
NC 1
8 VCC
ANODE 2
7 VO2
CATHODE 3
6 VO1
NC 4
5 VEE
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
8
1
8
1
8
1
©2008 Fairchild Semiconductor Corporation
FOD3150 Rev. 1.0.4
www.fairchildsemi.com
1 page  
Electrical Characteristics
Apply over all recommended conditions, typical value is measured at VCC = 30V, VEE = Ground, TA = 25°C
unless otherwise specified.
Symbol
Parameter
VF Input Forward Voltage
∆(VF / TA) Temperature Coefficient of
Forward Voltage
BVR Input Reverse Breakdown
Voltage
CIN Input Capacitance
IOH High Level Output Current(1)
IOL Low Level Output Current(1)
VOH High Level Output Voltage
VOL Low Level Output Voltage
ICCH
ICCL
IFLH
High Level Supply Current
Low Level Supply Current
Threshold Input Current
Low to High
VFHL
Threshold Input Voltage
High to Low
VUVLO+ Under Voltage Lockout
VUVLO– Threshold
UVLOHYS Under Voltage Lockout
Threshold Hysteresis
Conditions
IF = 10mA
Min.
1.2
Typ.
1.5
-1.8
Max.
1.8
Units
V
mV/ºC
IR = 10µA
5
V
f = 1MHz, VF = 0V
VO = VCC – 0.75V
VO = VCC – 4V
VO = VCC + 0.75V
VO = VCC + 4V
IF = 10mA, IO = -1A
IF = 10mA, IO = -100mA
IF = 0mA, IO = 1A
IF = 0mA, IO = 100mA
VO = Open, IF = 7 to 16mA
VO = Open, VF = 0 to 0.8V
IO = 0mA, VO > 5V
0.2
1.0
0.2
1.0
VCC – 4V
VCC – 0.5V
60
VCC – 6V
VCC – 0.1V
VEE + 6V
VEE + 0.1V
2.8
2.8
2.3
VEE + 4V
VEE + 0.5V
5
5
5.0
pF
A
A
V
V
mA
mA
mA
IO = 0mA, VO < 5V
0.8
V
IF = 10mA, VO > 5V
IF = 10mA, VO < 5V
11 12.7 13.5 V
9.5 11.2 12.0 V
1.5 V
©2008 Fairchild Semiconductor Corporation
FOD3150 Rev. 1.0.4
5
www.fairchildsemi.com
5 Page 
Test Circuit (Continued)
1
IF = 7 to 16mA
2
3
4
8
7 0.1µF
+
–
VCC = 15 to 30V
6 VO
100mA
5
Figure 22. VOH Test Circuit
18
100mA
27
0.1µF
+
–
VCC = 15 to 30V
3 6 VO
45
Figure 23. VOL Test Circuit
©2008 Fairchild Semiconductor Corporation
FOD3150 Rev. 1.0.4
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet FOD3150.PDF ] | |
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