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PDF IXTP44N10T Data sheet ( Hoja de datos )
| Número de pieza | IXTP44N10T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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TrenchTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTY44N10T
IXTP44N10T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
Lead Current Limit, (RMS) (TO-252)
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-252
TO-220
Maximum Ratings
100
100
V
V
±20 V
±30 V
44 A
25 A
110 A
10 A
250 mJ
12 V/ns
130 W
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
0.35
3.00
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 25μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
100 V
2.5 4.5 V
±100 nA
1 μA
200 μA
30 mΩ
VDSS = 100V
ID25 = 44A
RDS(on) ≤ 30mΩ
TO-252 (IXTY)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z Avalanche Rated
z Low RDS(on)
z High Current Handling Capability
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Automotive
- Motor Drives
- 24 / 48V Power Bus
- ABS Systems
z DC/DC Converters and Off-Line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99646A(2/10)
1 page  
90
80
70
60
50
40
30
20
10
25
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
RG = 18Ω , VGS = 10V
VDS = 50V
I D = 30A
I D = 10A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
130
t r td(on) - - - -
110 TJ = 125ºC, VGS = 10V
VDS = 50V
90 I D = 30A
70 I D = 10A
40
36
32
28
50 24
30 20
10 16
15 20 25 30 35 40 45 50 55 60
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
34 52
33 t f td(off) - - - - 48
RG = 18Ω, VGS = 10V
32
VDS = 50V
44
31
TJ = 125ºC
40
30 36
29 32
28 28
TJ = 25ºC
27 24
26 20
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
IXTY44N10T
IXTP44N10T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
90
80 RG = 18Ω , VGS = 10V
VDS = 50V
70
TJ = 25ºC
60
50
40
30 TJ = 125ºC
20
10
10 12 14 16 18 20 22 24 26 28
ID - Amperes
30
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
38
t f td(off) - - - -
36 RG = 18Ω, VGS = 10V
VDS = 50V
34
I D = 10A
32
55
50
45
40
30 35
28 30
I D = 30A
26 25
24 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
100
90 t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
80 VDS = 50V
70
60
I D = 10A
50
40
30 I D = 30A
20
15 20 25 30 35 40 45 50 55
RG - Ohms
110
100
90
80
70
60
50
40
30
60
© 2010 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTP44N10T.PDF ] | |
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