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PDF IXTA70N085T Data sheet ( Hoja de datos )
| Número de pieza | IXTA70N085T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTA70N085T
IXTP70N085T
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 85
ID25
RDS(on)
=
≤
70
13.5
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 50 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
Maximum Ratings
85
85
± 20
70
190
25
500
V
V
V
A
A
A
mJ
3 V/ns
176 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
3g
2.5 g
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 100 nA
10.5
1 μA
100 μA
13.5 mΩ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99639 (11/06)
1 page  
80
75
70
65
60
55
50
45
40
35
30
25
20
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 10Ω
VGS = 10V
VDS =42V
I D = 30A
I D = 10A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistiv e Turn-on
Switching Times vs. Gate Resistance
100 35
90 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
80 VDS = 42V
33
31
70 29
I D = 30A
I D = 10A
60 27
50 25
40 23
30 21
20 19
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
48 74
47
tf
td(off) - - - -
70
RG = 10Ω, VGS = 10V
46
VDS = 42V
66
45
TJ = 125ºC
62
44 58
43 54
42 50
41 46
40
TJ = 25ºC
42
39 38
38 34
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTA70N085T
IXTP70N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
85
80 RG = 10Ω
75 VGS = 10V
70 VDS = 42V
65
TJ = 25ºC
60
55
50
45
40
35
30 TJ = 125ºC
25
20
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
48 68
47
46 t f
td(off) - - - -
RG = 10Ω, VGS = 10V
45 VDS = 42V
44
I D = 10A
65
62
59
56
43 53
42 50
41
I D = 30A
47
40 44
39 41
38 38
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
120
t f td(off) - - - -
110 TJ = 125ºC, VGS = 10V
100 VDS = 42V
I D = 10A
190
170
150
90 130
80
I D = 30A
110
70 90
60 70
50 50
40 30
10 12 14 16 18 20 22 24 26 28 30 32 34
RG - Ohms
IXYS REF: T_70N085T (2V) 7-10-06.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTA70N085T.PDF ] | |
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