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Número de pieza | IXTY55N075T | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXTY55N075T (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTP55N075T
IXTY55N075T
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 75
ID25 = 55
RDS(on) ≤ 19.5
V
A
mΩ
TO-220 (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
IL
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Package Current Limit, RMS
TO-252
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG =18 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
75 V
75 V
± 20 V
55 A
25 A
150 A
10 A
250 mJ
3 V/ns
130 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
TO-220
TO-252
3g
0.35 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 25 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 100 nA
1 μA
100 μA
19.5 mΩ
GD S
TO-252 (IXTY)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99631 (11/06)
1 page 85
80
75
70
65
60
55
50
45
40
35
30
25
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 18Ω
VGS = 10V
VDS = 37.5V
I D = 30A
I D = 10A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
150
tr
td(on) - - - -
31
130 TJ = 125ºC, VGS = 10V
29
VDS = 37.5V
110
ID = 30A
27
90 25
70 I D = 10A 23
50 21
30 19
10 17
15 20 25 30 35 40 45 50 55 60
RG - Ohms
42
41
40
39
38
37
36
35
34
33
32
31
30
10
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
t f td(off) - - - -
RG = 18Ω, VGS = 10V
VDS = 37.5V
54
52
50
48
46
44
TJ = 125ºC
42
40
38
36
34
TJ = 25ºC
32
30
12 14 16 18 20 22 24 26 28 30
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTP 55N075T
IXTY 55N075T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
85
80 RG = 18Ω
75 VGS = 10V
70 VDS = 37.5V
TJ = 25ºC
65
60
55
50
45
40
35 TJ = 125ºC
30
25
10 12 14 16 18 20 22 24 26 28 30
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
42 54
40 t f
td(off) - - - -
RG = 18Ω, VGS = 10V
38 VDS = 37.5V
I D = 10A
50
46
36 42
34 38
ID = 30A
32 34
30 30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
95
90
85
80
75
70
65
60
55
50
45
40
35
30
15
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
I D = 10A
I D = 30A
t f td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 37.5V
20 25 30 35 40 45 50 55
RG - Ohms
130
120
110
100
90
80
70
60
50
40
30
20
10
0
60
IXYS REF: T_55N075T (1V) 7-13-06.xls
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXTY55N075T.PDF ] |
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