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PDF IXTA200N055T2-7 Data sheet ( Hoja de datos )
| Número de pieza | IXTA200N055T2-7 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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TrenchT2TM
Power MOSFET
Preliminary Technical Information
IXTA200N055T2-7
VDSS =
ID25 =
RDS(on) ≤
55V
200A
4.2mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
55
55
V
V
± 20 V
200 A
160 A
500 A
100 A
600 mJ
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
3g
Characteristic Values
Min. Typ. Max.
55 V
2.0 4.0 V
±200 nA
5 μA
50 μA
3.3 4.2 mΩ
TO-263 (7-lead)
1
7
Pins: 1 - Gate
2, 3 - Source
5,6,7 - Source
TAB (8) - Drain
(TAB)
Features
z International standard package
z 175°C Operating Temperature
z High current handling capability
z Avalanche rated
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- 12V Battery
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS100081(11/08)
1 page  
IXTA200N055T2-7
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
25
RG = 3.3Ω
24 VGS = 10V
VDS = 30V
23
22 I D = 50A
21
I D = 25A
20
19
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
140
t r td(on) - - - -
120 TJ = 125ºC, VGS = 10V
100
VDS = 30V
52
48
44
80
I D = 50A, 25A
60
40
36
40 32
20 28
0 24
4 6 8 10 12 14 16 18 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
29 80
t f td(off) - - - -
RG = 3.3Ω, VGS = 10V
28
TJ = 125ºC
VDS = 30V
70
27 60
26 50
25 40
TJ = 25ºC
24 30
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
24.0
23.5
23.0
RG = 3.3Ω
VGS = 10V
VDS = 30V
TJ = 125ºC
22.5
22.0
21.5
21.0
20.5
TJ = 25ºC
20.0
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
t f td(off) - - - -
29 RG = 3.3Ω, VGS = 10V
VDS = 30V
28
I D = 25A
90
80
70
27 60
26 50
I D = 50A
25 40
24 30
23 20
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
140
t f td(off) - - - -
120 TJ = 125ºC, VGS = 10V
VDS = 30V
100 I D = 25A
240
200
160
80 120
60 80
I D = 50A
40 40
20 0
4 6 8 10 12 14 16 18 20
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTA200N055T2-7.PDF ] | |
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