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PDF B963-Z Data sheet ( Hoja de datos )
| Número de pieza | B963-Z | |
| Descripción | PNP Transistor - 2SB963-Z | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON POWER TRANSISTOR
2SB963-Z
PNP SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
DESCRIPTION
The 2SB963-Z is designed for switching, especially in Hybrid
Integrated Circuits.
<R>
FEATURES
• High Gain hFE = 2000 to 3000
• Complement to 2SD1286-Z
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
Note
2.3 ±0.2
0.5 ±0.1
Note
123
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector Current (DC)
Collector Current (pulse) Note 1
Total Power Dissipation Note 2
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT (TA = 25°C)
Tj
Tstg
−60
−60
−8
m1.0
m2.0
2.0
150
−55 to +150
V
V
V
A
A
W
°C
°C
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
0.15 ±0.15
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18261EJ4V0DS00 (4th edition)
(Previous No. TC-1627A)
Date Published July 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1985, 2006
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