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Teilenummer | C3075 |
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Beschreibung | NPN Transistor - 2SC3075 | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 5 Seiten TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3075
2SC3075
Switching Regulator and High Voltage Switching
Applications
DC-DC Converter Applications
DC-AC Converter Applications
Unit: mm
· Excellent switching times: tr = 1.0 µs (max)
tf = 1.5 µs (max), (IC = 0.5 A)
· High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
500
400
7
0.8
1.5
0.5
1.0
10
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2002-07-23
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ C3075 Schematic.PDF ] |
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