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PDF AO4710 Data sheet ( Hoja de datos )
| Número de pieza | AO4710 | |
| Descripción | 30V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4710
30V N-Channel MOSFET
SRFET TM
General Description
SRFET TM The AO4710 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON), and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
Product Summary
VDS (V) = 30V
ID =12.7A (VGS = 10V)
RDS(ON) < 11.8mΩ (VGS = 10V)
RDS(ON) < 14.2mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.3mH C
IDSM
IDM
IAR
EAR
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
12.7
10
60
22
73
3.1
2.0
-55 to 150
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
V
A
A
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AO4710
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1.0E-05
1.0E-06
0 50 100 150 200
Temperature (°C)
DYNAMIC PAFRigAurMe E12T: EDRioSde Reverse Leakage Current vs.
Junction Temperature
25
125ºC
di/dt=800A/us
20
15 Qrr
10 Irm
5
125ºC
25ºC
25ºC
8
6
4
2
00
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
1
0.9
0.8 20A
0.7
0.6
0.5
10A
0.4 5A
0.3
0.2
0.1 IS=1A
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
15 2.5
di/dt=800A/us
12
125ºC
2
9
trr
6
S
3
25ºC
25ºC
125ºC
1.5
1
0.5
00
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
25 10
125ºC 9
20 8
Is=20A
25ºC 7
15 6
5
10
125º
4
5 Qrr
25ºC
3
2
0 Irm
1
0
0 200 400 600 800 1000
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
18
15 125ºC
12 25ºC
Is=20A
3
2.5
2
9
6 25ºC
trr 1.5
1
3 125ºC
S 0.5
00
0 200 400 600 800 1000
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4710.PDF ] | |
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