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B1645 Schematic ( Datenblatt PDF ) - Panasonic Semiconductor

Teilenummer B1645
Beschreibung 2SB1645
Hersteller Panasonic Semiconductor
Logo Panasonic Semiconductor Logo 

Gesamt 2 Seiten
		
B1645 Datasheet, Funktion
Power Transistors
2SB1645
Silicon PNP triple diffusion planar type Darlington
For power amplification
I Features
Satisfactory forward current transfer ratio hFE characteristics
Wide area of safe operation (ASO)
Optimum for the output stage of a HiFi audio amplifier
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
160
160
5
15
8
100
3
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
5°
3.0±0.3
5°
(4.0)
2.0±0.2
5°
5°
5°
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5°
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = −160 V, IE = 0
VCB = −160 V, IE = 0
VEB = −5 V, IC = 0
IC = −10 mA, IB = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −7 A
IC = −7 A, IB = −7 mA
IC = −7 A, IB = −7 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = 7 A, IB1 = −7 mA, IB2 = 7 mA
VCC = −50 V
Note) *: Rank classification
Rank
P
Q
hFE2 5 000 to 15 000 3 500 to 10 000
Min
160
500
3 500
E
Typ Max
100
100
100
15 000
3
3
20
1.0
1.5
1.2
Unit
µA
µA
µA
V
V
V
MHz
µs
µs
µs
1


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