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L6208PD Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer L6208PD
Beschreibung FULLY INTEGRATED STEPPER MOTOR DRIVER
Hersteller STMicroelectronics
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Gesamt 30 Seiten
L6208PD Datasheet, Funktion
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February 2014
This is information on a product in full production.
L6208
DMOS driver for bipolar stepper motor
Datasheet - production data
Features
Operating supply voltage from 8 to 52 V
5.6 A output peak current (2.8 A RMS)
RDS(ON) 0.3 typ. value at Tj = 25 °C
Operating frequency up to 100 KHz
Non-dissipative overcurrent protection
Dual independent constant tOFF PWM current
controllers
Fast/slow decay mode selection
Fast decay quasi-synchronous rectification
Decoding logic for stepper motor full and half
step drive
Cross conduction protection
Thermal shutdown
Undervoltage lockout
Integrated fast freewheeling diodes
Applications
Bipolar stepper motor
Description
The L6208 device is a DMOS fully integrated
stepper motor driver with non-dissipative
overcurrent protection, realized in BCD
technology, which combines isolated DMOS
power transistors with CMOS and bipolar circuits
on the same chip. The device includes all the
circuitry needed to drive a two phase bipolar
stepper motor including: a dual DMOS full bridge,
the constant off time PWM current controller that
performs the chopping regulation and the phase
sequence generator, that generates the stepping
sequence. Available in PowerDIP24 (20 + 2 + 2),
PowerSO36 and SO24 (20 + 2 + 2) packages, the
L6208 device features a non-dissipative
overcurrent protection on the high-side Power
MOSFETs and thermal shutdown.
DocID7514 Rev 2
1/35
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L6208PD Datasheet, Funktion
Pin connections
3 Pin connections
L6208
Figure 2. Pin connections (top view)
CLOCK
CW/CCW
SENSEA
RCA
OUT1A
GND
GND
OUT1B
RCB
SENSEB
VREFB
HALF/FULL
1 24
2 23
3 22
4 21
5 20
6 19
7 18
8 17
9 16
10 15
11 14
12 13
D99IN1083
VREFA
RESET
VCP
OUT2A
VSA
GND
GND
VSB
OUT2B
VBOOT
EN
CONTROL
PowerDIP24/SO24
GND
N.C.
N.C.
VSA
OUT2A
N.C.
VCP
RESET
VREFA
CLOCK
CW/CCW
SENSEA
RCA
N.C.
OUT1A
N.C.
N.C.
GND
1 36
2 35
3 34
4 33
5 32
6 31
7 30
8 29
9 28
10 27
11 26
12 25
13 24
14 23
15 22
16 21
17 20
18 19
D99IN1084
PowerSO36(1)
GND
N.C.
N.C.
VSB
OUT2B
N.C.
VBOOT
EN
CONTROL
HALF/FULL
VREFB
SENSEB
RCB
N.C.
OUT1B
N.C.
N.C.
GND
1. The slug is internally connected to pins 1, 18, 19 and 36 (GND pins).
Package
Table 4. Pin description
SO24/
PowerDIP24
PowerSO36
Name
Type
Function
Pin no.
Pin no.
1
2
3
4
5
6, 7, 18, 19
10
11
12
13
15
1, 18, 19, 36
CLOCK
CW/CCW
SENSEA
RCA
OUT1A
GND
Logic input
Step clock input. The state machine makes one step on
each rising edge.
Logic input
Selects the direction of the rotation. HIGH logic level
sets clockwise direction, whereas LOW logic level sets
counterclockwise direction.
If not used, it has to be connected to GND or +5 V.
Power supply
Bridge A source pin. This pin must be connected to
power ground through a sensing power resistor.
RC pin
RC network pin. A parallel RC network connected
between this pin and ground sets the current controller
OFF-time of the bridge A.
Power output
Bridge A output 1.
GND
Ground terminals. In PowerDIP24 and SO24 packages,
these pins are also used for heat dissipation toward the
PCB. On PowerSO36 package the slug is connected to
these pins.
6/35 DocID7514 Rev 2

6 Page









L6208PD pdf, datenblatt
Circuit description
5 Circuit description
L6208
5.1 Power stages and charge pump
The L6208 integrates two independent power MOS full bridges. Each power MOS has an
RDS(ON) = 0.3 (typical value at 25 °C), with intrinsic fast freewheeling diode. Switching
patterns are generated by the PWM current controller and the phase sequence generator
(see Section 6: PWM current control). Cross conduction protection is achieved using
a deadtime (tDT = 1 s typical value) between the switch off and switch on of two Power
MOSFETs in one leg of a bridge.
Pins VSA and VSB MUST be connected together to the supply voltage VS. The device
operates with a supply voltage in the range from 8 V to 52 V. It has to be noticed that the
RDS(ON) increases of some percents when the supply voltage is in the range from 8 V to 12 V
(see Figure 38: Typical low-side RDS(ON) vs. supply voltage on page 29 and Figure 35:
Typical high-side RDS(ON) vs. supply voltage on page 29).
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive
voltage above the power supply voltage. The bootstrapped supply voltage VBOOT is obtained
through an internal oscillator and few external components to realize a charge pump circuit
as shown in Figure 8. The oscillator output (VCP) is a square wave at 600 KHz (typical) with
10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown
in Table 6.
Table 6. Charge pump external components values
Component
Value
CBOOT
CP
RP
D1
D2
220 nF
10 nF
100
1N4148
1N4148
Figure 8. Charge pump circuit
D1
D2
CBOOT
VS
RP
CP
VCP VBOOT
VSA VSB D01IN1328
12/35
DocID7514 Rev 2

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